Bipolar Transistor MAT02AH

0.00

Category: Tag:

Description

MAT02AH is a Bipolar (BJT) Transistor Array 2 NPN (Dual) 40 V 20 mA 500 mW Through Hole TO-78-6

FEATURES

  • Transistor Type: 2 NPN (Dual)
  • Current-Collector (Ic) (Max): 20 mA
  • Voltage-Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 100 mV @ 100 µA, 1 mA
  • Current-Collector Cutoff (Max): 200 pA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 1 mA, 40 V
  • Power-Max: 500 mW
  • Frequency-Transition: –
  • Operating Temperature: -25 °C ~ 85 °C
  • Mounting Type: Through Hole

SPECIFICATION

  • Dimension: 4.7 × 9.4 × 9.4 mm
  • Additional information
  • Gross weight: 0.75 g
  • Manufacturer part number: MAT02AH

Reviews

There are no reviews yet.

Be the first to review “Bipolar Transistor MAT02AH”

Your email address will not be published. Required fields are marked *